Design and Development of DC circuit breaker for DC microgrid
DC microgrids face the more serious fault protection problem than AC systems due to lack of natural zero crossing, which make it difficult to isolate the fault without arcing.?This project intends to design and develop a Solid StateCircuit Breaker(SSCB) for DC Microgrids which can int
Project Title
Design and Development of DC circuit breaker for DC microgrid
Project Area of Specialization
Project Summary
DC microgrids face the more serious fault protection problem than AC systems due to lack of natural zero crossing, which make it difficult to isolate the fault without arcing.?This project intends to design and develop a Solid StateCircuit Breaker(SSCB) for DC Microgrids which can interrupt the current without arcing and having faster response timein comparison to conventional Electromechanical CircuitBreakers. Power Semiconductor Technology has been usedfor Low-Voltage DC Bidirectional Solid State Circuit Breaker applications.
Project Objectives
- Improved interruption performance characteristics.?
- Interrupt the flow of charges without arcing.?
- Faster response time.?
- Reduced On-state losses.?
- Higher tolerance to voltage and current surges.
Project Implementation Method
-
We are using power semiconductor technology to achieve our objectives. ?
-
We are going to design and develop thyristor based solid state breaker(SSCB) as a protective device for DC microgrids.
-
we are working on 2 different topologies 1)Cathode-short MOS controlled thyristor
2)Reverse blocking-integrated gate commutated thyristor? 
Benefits of the Project
- high power efficiency for DC microgrid protection.
- extremely quick current interruption capability
- semiconductorbased circuit breakers can limit the let-through energy and arc hazard exposure in the event of a fault by multiple orders of magnitude.
- power semiconductor devices can execute a much higher number of operations
- greatly increased lifetime for circuit breakers
- because semiconductor devices have no moving parts, they operate without making
any noise - IGCT has low inherent loss conduction thyristor properties
- IGCT turns-off like an IGBT in open base transistor mode
Technical Details of Final Deliverable
- Pscad Simulation of CS-MCT
- Pscad Simulation of RB-IGCT
- Prototype of CS-MCT
- Experimental Verification and Testing of Circuit Breaker.
Final Deliverable of the Project
Core Industry
Other Industries
Core Technology
Other Technologies
Sustainable Development Goals
Required Resources
| Item Name | Type | No. of Units | Per Unit Cost (in Rs) | Total (in Rs) |
|---|---|---|---|---|
| Small Signal P-Channel MOSFET High Temp TO-18 RoHS | Equipment | 1 | 20000 | 20000 |
| Small Signal N-Channel MOSFET High Temp TO-18 | Equipment | 1 | 20000 | 20000 |
| NPN | Equipment | 2 | 1500 | 3000 |
| PNP | Equipment | 2 | 1500 | 3000 |
| Power supply, Wires, Oscilloscope, HV supply | Miscellaneous | 1 | 5000 | 5000 |
| Total in (Rs) | 51000 |
If you need this project, please contact me on contact@adikhanofficial.com
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